semihow rev.a1,march 2013 bt136 - 600 t2 t1 g features ? repetitive peak off - state voltage : 600v ? r.m.s on ? state current (i t(rms) = 4a) ? sensitive gate trigger current - 5[ma] of igt at i, ii and iii quadrants. - 12[ma] of igt at iv quadrant. applications heating control, lighting control, motor control such like dimmer, sensor light, humidifier, etc. general description semihow?s sensitive triac product is a glass passivated device, has a low gate trigger current, high stability in gate trigger current to variation of operating temperature and high off state voltage . it is generally suitable for power and phase control in ac application . bt136 -600 4 quadrants sensitive triac v drm = 600 v i t(rms) = 4 a i tsm = 33 a i gt = 5ma/12ma symbol absolute maximum ratings (t j =25 unless otherwise specified ) symbol parameter conditions ratings unit v drm repetitive peak off - state voltage sine wave, 50/60hz, gate open 600 v v rrm repetitive peak reverse voltage 600 v i t(av) average on - state current full sine wave, t c = 109.5 o c 3.6 a i t(rms) r.m.s. on - state current 4 a i tsm surge on - state current ? cycle, 50hz/60hz, sine wave, non repetitive 30/33 a i 2 t fusing current t = 10ms 4.5 a 2 s p gm forward peak g ate power dissipation t j = 125 c 2 w p g(av) forward average gate power dissipation t j = 125 c, over any 20ms 0.2 w i fgm forward peak gate current t j = 125 c, pulse width 20us 1 a v rgm reverse peak gate voltage t j = 125 c, pulse width 20us 6 v t j operating junction temperature - 40~+125 o c t stg storage temperature - 40~+150 o c to - 220
semihow rev.a1,march 2013 bt136 - 600 thermal characteristics electrical characteristics ( t j =25 unless otherwise specified ) notes : 1. pulse width 1.0ms, duty cycle 1% symbol parameter conditions min typ max unit i drm repetitive peak off - state current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i rrm repetitive peak reverse current v d = v drm t j =25 o c - - 50 ua t j =125 o c - - 5 ma i gt gate trigger current v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 5 ma 3+ - - 12 ma v gt gate trigger voltage v d = 12v, r l =330 ? 1+, 1 -, 3 - - - 1.5 v 3+ - - 2.0 v v gd non - trigger gate voltage 1 v d = 12v, r l =330 ? , t j =125 o c 0.2 - - v v tm peak on - state voltage i t = 5.6a, i g = 20ma - - 1.6 v dv/ dt critical rate of rise of off - state voltage v d = 2/3 v drm , t j =125 o c 10 - - v/us i h holding current i t = 0.2a - 5 - ma symbol parameter conditions min typ max unit r jc thermal resistance junction to case 3.6 o c /w r ja thermal resistance junction to ambient 80 o c /w
semihow rev.a1,march 2013 bt136 - 600 0 1 2 3 4 5 0 1 2 3 4 5 180 o 150 o 120 o 90 o 60 o 30 o power dissipation, p d [w] r.m.s. on state current, i t(rms) [a] 0 1 2 3 4 5 100 105 110 115 120 125 130 180 o 150 o 120 o 90 o 60 o 30 o maximum allowable case temperature, t c [ o c] r.m.s. on state current, i t(rms) [a] 10 0 10 1 10 2 10 3 10 4 10 -1 10 0 10 1 25[ o c] i + gt3 25[ o c] i + gt1 i - gt1 i - gt3 p g(av) (0.2w) p gm (2w) v gd gate voltage, v g [v] gate current, i g [ma] 10 0 10 1 10 2 0 5 10 15 20 25 30 35 40 50hz surge on state current, i tsm [a] time[cycles] 60hz -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 i + gt3 junction temperature, t j [ o c] x 100(%) i gt (t o c) i gt (25 o c) i + gt1 i - gt1 i - gt3 -50 -25 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 2.5 v + gt1 v - gt1 v + gt3 v - gt3 junction temperature, t j [ o c] x 100(%) v gt (t o c) v gt (25 o c) typical characteristics fig 1. r.m.s. current vs. power dissipation fig 2. r.m.s. current vs. case temperature fig 3. gate power characteristics fig 4. surge on state current rating (non - repetitive) fig 5. gate trigger current vs. junction temperature fig 6. gate trigger voltage vs. junction temperature
semihow rev.a1,march 2013 bt136 - 600 0 1 2 3 4 5 10 -1 10 0 10 1 10 2 125 o c 25 o c instantaneous on state current, i t [a] instantaneous on state voltage, v t [v] 10 -2 10 -1 10 0 10 1 10 0 10 1 10 2 10 3 thermal impedance [ o c/w] pulse time [sec] typical characteristics fig 7. instantaneous on state current vs. instantaneous on state voltage fig 8. thermal impedance vs. pulse time r g r l v dd v g (1) quadrant i r g r l v dd v g (2) quadrant ii r g r l v dd v g (3) quadrant iii r g r l v dd v g (4) quadrant iv measurement of gate trigger current note. whole parameter and test condition can not be over absolute maximum ratings in this datasheet. r s =0.078 ? v to =0.85v
semihow rev.a1,march 2013 bt136 - 600 package dimension 9.19 0.20 3.60 0.20 9.90 0.20 2.80 0.20 15.70 0.20 13.08 0.20 3.02 0.20 2.54typ 6.50 0.20 0.80 0.20 1.27 0.20 1.52 0.20 1.30 0.20 4.50 0.20 0.50 0.20 2.40 0.20 2.54typ to - 220 (a)
semihow rev.a1,march 2013 bt136 - 600 0.20 2.74 0.20 15.44 0.20 13.28 0.20 2.67 0.20 6.30 0.20 0.81 0.20 1.27 0.20 1.27 0.20 4.57 0.20 0.40 0.20 2.67 0.20 9.14 0.20 3.84 0.20 2.54typ 2.54typ to - 220 (b) package dimension
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